LABORATORY OF MEDICAL PHYSICS
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 Head of the Department:
Fattakhov Yakh'ya Valeevich,
Senior researcher, Ph.D.
tel.: +7 (8432) (843) 272 12 41
e-mail: fattakhov@kfti.knc.ru
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Staff and postgraduate students:
Fakhrutdinov A.R.(Ph.D.), Anashkin V.N., Shagalov V.A., Farrahov B.F., Galialtdinov M.K., Karsalova N.A., Saikin K.S., Bajazitov A.A., Galiakberova E.R., Gatina R.Ch., Mishenkova A.Zh.
Main fields of research:
Analysis of the needs of medicine in modern physical techniques in diagnostics and therapy, research into possible ways of applying scientific and technical potential of ZPhTI in medicine. Study and development of new physical techniques, including MRI in order to further apply them in diagnostics and treatment. Investigation of physical backgrounds and development of the sensor technology in molecular electronics (physical, chemical, and biological sensors).
Directions and results of research
A complex of research and experimental-engineering works in the field of magnetic resonance tomography (in co-operation with the Department of Chemical Physics). The investigations have been conducted, and a physical and mathematical model of a tomograph magnetic system has been created; the calculation routine has been engineered. Theoretical calculations have been done, and unique software to control the NMR experiment and mathematical data processing has been engineered. Original electronic units of a radiospectrometer have been designed. On the bases of the results of this research, a medical magnetic-resonance tomograph TMR-0.02-KPTI has been designed and produced. At present the advancement of software and the modification of electronic units are carried out to improve the quality of imaging.
The investigation of physical principles of the formation of submicron-doped layers of semiconductors (in co-operation with the Laboratory of Radiation Physics and the Department of Chemical Physics). The main regularities of structural and phase transitions observed at irradiation of semiconductors by ion beams and powerful light pulses are studied. In particular, it will allow the development of the new technologies for sensors for the purposes of medicine, ecology, and other fields (in co-operation with the Laboratory of Biophysics and the Laboratory of Molecular Radiospectroscopy).
Contacts with the other institutions, international co-operation
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Kazan State University, Kazan
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Kazan State Medical Academy of Postgraduate Education,
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Kazan Scientific-Innovational Center of Medical Radiology, Moscow
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Russian Research and Testing Institute of Medical Equipment, Moscow
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Research Institute of Materiology, Moscow
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Institute of High-Current Electronics of the Siberian Branch of RAS, Tomsk
Basic publications
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D.Ya. Osokin, R.Kh. Kurbanov, and V.A. Shagalov.: Multiple Echoes in the Effective Field of Multipulse Trains in Nuclear Quadrupole Resonance. JETP Lett., 62, No. 4, P.310 -313, 1995
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V.A. Shagalov, V.N. Anashkin, F.F. Gubaidullin, R.Kh. Kurbanov, and D.Ya. Osokin.: A Programmable Pulse Sequence Generator for a Nuclear Magnetic Resonance (Nuclear Quadrupole Resonance). Spectrometer. Pribory i Tekhnika Eksperimenta, 41, No. 2, P.188-191, 1998
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Grosse S., Gubaidullin F., Scheelken H., Vieth H.-M., Yurkovskaya A.V.: Field Cycling by Fast NMR Probe Transfer: Design and Application in Field-Dependent CIDNP Experiments. Appl. Magn. Reson. 17, 211–225 (1999)
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Fattakhov Ya.V., Bayazitov R.M., Khaibullin I.B., L`vovaT.N., Eremin E.A.: Melting of Semiconductors at Fast Homogeneous Heating by Optical Irradiation. Izvestiya RAN (in Russian), 59, No. 12, P.136-142 (1995).
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Fattakhov Y.V., L`vova T.N., Bayazitov R.M., Khaibullin I.B.: Inhomogeneous Melting of Semiconductor Surface at Light Irradiation by Powerful Pulses. Intern. Conf. "LASERS'95". Charleston, SC, USA. - 1995. Proceedings.- Ed. by V.J. Corcoran and T.A. Goldman. STS PRESS. McLean, VA, USA. -1996. - P.586-593; Fattakhov Y.V. Pulse Light Annealing of Implanted Silicon. ibid. - P.601-604.
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Fattakhov Ya.V., Galyautdinov M.F., L`vovaT.N., Khaibullin I.B.: Formation of Two-Dimensional Periodic Structure of Local Melting Areas on Silicon Surface at Pulsed Light Irradiation. Zhurnal Tekhnicheskoi Fiziki (in Russian), 67, No. 12, P.97-99 (1997).
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Fattakhov Y.V., Galyautdinov M.F., L`vova T.N., Khaibullin I.B.: The Dynamics of Recrystallization and Melting of Implanted Silicon Irradiation by Powerful Light Pulses. Vacuum. 51, No. 2. P.255-259 (1998).
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Fattakhov Ya.V., Galyautdinov M.F., L`vovaT.N., Khaibullin I.B.: Method of Production of Holograms on Silicon, Patent of the Russian Federation for the invention N 2120653 .(1998)
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